Magneto Resistive RAM (MRAM) Market - Overview
The global Magneto Resistive RAM Market witnesses rapid revenue
increase. Magneto resistive RAM (MRAM) products are poised to disrupt the
traditional memory markets. MRAM delivers the industry’s most robust, highest
performance non-volatile memory for mission-critical applications, such as Industrial
IoT and Data Centers. MRAM is particularly being utilized for its low power
consumption in micro-controllers and systems on chips.
With the increasing availability of commercial MRAM
solutions for large and diverse applications, the market is projected to garner
significant traction in the years to come. According to Market Research Future
(MRFR), the global magneto resistive RAM market is expected to reach USD 1396.7
MN by 2027, growing at approx. 18.58% CAGR throughout the assessment period
(2020- 2027).
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Additional factors such as the growing need for
cloud computing due to increased data centers worldwide act as a major tailwind
for the market growth. Also, the increase in the production of new mobile
computing devices pushes the market value, increasing data center usages among
various organizations. Furthermore, the growing demand for wearables and
flexible electronic products create vast market demand.
Magneto Resistive RAM Market - Segments
The market report is segmented into products,
applications, and regions. The product segment is sub-segmented into STT,
Toggle, and others. The application segment is sub-segmented into aerospace
& defense, automotive, robotics, consumer electronics, enterprise storage,
and others. The region segment is sub-segmented into Asia Pacific, Americas,
Europe, and the Rest-of-the-World.
Magneto Resistive RAM (MRAM) Market -
Geographical Analysis
North America dominates the global magneto resistive
RAM market. The presence of well-established technology development centers and
several notable players rendering technical expertise drive the market growth.
Besides, the growing adoption of consumer
electronics and robotics, automotive, and the rising demand for MRAM in various
end-use applications to achieve scalability and improve the memory capacity
substantiate the region’s market shares.
Global Magneto Resistive RAM Market -
Competitive Landscape
The MRAM market appears highly competitive and
fragmented, with several well-established players forming a competitive
landscape. To gain a substantially larger competitive share, players
incorporate approaches, such as mergers & acquisitions, collaboration,
innovation, and expansion. They substantially invest in R&D to develop
adept technologies and products and drive their global footprints.
Major Players
Players active in the MRAM market include NVE
Corporation (US), Toshiba Corporation (Japan), Everspin Technologies Inc. (US),
Spin Memory, Inc. (US), Avalanche Technology Inc. (US), Honeywell International
Inc. (US), Numem Inc. (US), Samsung Electronics Co. Ltd (South Korea), and
Taiwan Semiconductor Manufacturing Company Limited (Taiwan), among others.
Industry/ Innovation/ Related News:
Sep.27, 2021 ---- Avalanche Technology, a leading
provider of next-generation MRAM technology, introduced new 64Mb STT-MRAM
memory devices for industrial applications. The new 64Mb parallel x16
industrial P-SRAM products are the smallest form factor and lowest power
high-reliability non-volatile memory devices available in the market.
With this new product release, Avalanche brought
high-reliability industrial products with the smallest form factor and lowest
power, enabling customers to design unified memory architecture systems for
industrial data logging applications.
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