Magneto Resistive RAM (MRAM) Market - Overview
The global Magneto Resistive RAM Market witnesses rapid revenue increase. Magneto resistive RAM (MRAM) products are poised to disrupt the traditional memory markets. MRAM delivers the industry’s most robust, highest performance non-volatile memory for mission-critical applications, such as Industrial IoT and Data Centers. MRAM is particularly being utilized for its low power consumption in micro-controllers and systems on chips.
The Magneto resistive RAM (MRAM) Market is driven by growing demand for electronic wearables and flexible electronic products over the forecast period. As wearable and flexible devices are slim and compact, their circuitry is complex and consists of various electronic components such as thousands of transistors and integrated circuits. To fit these complex components on a tiny circuit board is a tedious task, due to which tremendous research & development effortsare undertaken by companies to use MRAM, customize the integrated circuits, and reduce the size of the overall device.
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Magne to resistive Random Access Memory (MRAM) is classified as a type of non-volatile random-access memory that can store large amounts of data in magnetic domains.It was developed in the 1980s, and proponents of the technology have propounded that MRAM will ultimately surpass competing technologies in terms of end user adoption to become the most dominant or even universal memory probably. These electronic products need flexible magnetic memory storage for the processing of data. MRAM has proven to be highly efficient in terms of performance compared to conventional NAND, having better processing speed, power efficiency, and can retain data even during power cuts.
Magneto Resistive RAM Market - Segments
The market report is segmented into products, applications, and regions. The product segment is sub-segmented into STT, Toggle, and others. The application segment is sub-segmented into aerospace & defense, automotive, robotics, consumer electronics, enterprise storage, and others. The region segment is sub-segmented into Asia Pacific, Americas, Europe, and the Rest-of-the-World.
Magneto Resistive RAM (MRAM) Market - Geographical Analysis
North America dominates the global magneto resistive RAM market. The presence of well-established technology development centers and several notable players rendering technical expertise drive the market growth.
Besides, the growing adoption of consumer electronics and robotics, automotive, and the rising demand for MRAM in various end-use applications to achieve scalability and improve the memory capacity substantiate the region’s market shares.
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Global Magneto Resistive RAM Market - Competitive Landscape
The MRAM market appears highly competitive and fragmented, with several well-established players forming a competitive landscape. To gain a substantially larger competitive share, players incorporate approaches, such as mergers & acquisitions, collaboration, innovation, and expansion. They substantially invest in R&D to develop adept technologies and products and drive their global footprints.
Major Players
Players active in the MRAM market include NVE Corporation (US), Toshiba Corporation (Japan), Everspin Technologies Inc. (US), Spin Memory, Inc. (US), Avalanche Technology Inc. (US), Honeywell International Inc. (US), Numem Inc. (US), Samsung Electronics Co. Ltd (South Korea), and Taiwan Semiconductor Manufacturing Company Limited (Taiwan), among others.
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