According to Market Research Future (MRFR), The
global Dynamic Random Access Memory (DRAM) Market size is estimated to reach
328.59 billion with a compound annual growth rate of 28.70% from 2018 to 2023
(forecast period). The report covers the COVID-19 analysis of the dynamic
random access memory (DRAM) market and offers a full and detailed overview of
market segments, current developments, growth projections, and business
challenges from 2018 to 2023 (the prediction period) to assess market
opportunities.
Dynamic Random Access Memory (DRAM) is a type of RAM
used in computer devices to store data or program code that a computer
processor needs to operate. This type of RAM allows the process to directly
access any part of the memory without proceeding sequentially from starting.
DRAM stores every bit of data in a separate storage cell within an integrated
circuit board. DRAM has only one capacitor and one transistor per bit, unlike
the Static Random Access Memory (SRAM), which requires six transistors. The
critical benefit of DRAM is its simple design, low cost, and speed compared to
other alternatives.
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Market Dynamics
Over the years, the electronics industry has seen
rapid progress in terms of connectivity, data transfer rate, processing power,
and human interaction. Technologies such as IoT and AI have revolutionized the
electronics industry, increasing the market for smartphones, PCs, laptops, and
other computer devices. DRAM provides higher storage at faster data transfer
speed compared to its previous counterparts.
Growing demand for smartphones in the consumer
product industry with improved gaming, photography, and higher data transfer
rates for efficient communication needs the use of DRAM. As a result, this
rising demand for smartphone applications captures a considerable DRAM market
share.
Market Segmentation
The global DRAM market has been segmented based on
type, technology, and application.
Based on type, the global DRAM market has been
segmented into Synchronous DRAM, Burst Extended Data Output (BEDO), Extended
Data Output (EDO), Asynchronous DRAM, and FPM (Fast Page Mode).
Based on technology, the global DRAM market has been
segmented into DDR4, DDR3, DDR5/GDDR5, DDR2.
Based on application, the global DRAM market has
been segmented into mobile phones, PCs/laptops, gaming consoles, and networking
devices.
Regional Analysis
Based on the region, the global DRAM market has been
segmented into North America, Europe, Asia Pacific, and the rest of the world.
The DRAM market has been projected to see a healthy
amount of growth during the prediction period. This can be mainly attributed to
its smartphone preference and the fact that smartphones have become
increasingly popular in developing countries such as China, Brazil, and India.
The Asia Pacific region has dominated the DRAM market and is expected to remain
dominant in the coming years. The other markets that are growing are North
America, which has performed very well in the past and is expected to continue
doing so during the forecast period. The region of the Middle East and Africa
is projected to display the best growth rate in the forecast period.
Key Players
The key players identified by MRFR operating in the
global DRAM market are Winbond Electronics Corporation, Samsung Electronics
Co., Ltd., Nanya Technology Corporation, Micron Technology, Inc., ATP
Electronics, Inc., Integrated Silicon Solution Inc., Powerchip Technology
Corporation, SK Hynix Inc., Kingston Technology Corporation and Transcend Information,
Inc.
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