Global DRAM Market - Overview
According to Market Research Future (MRFR), The global Dynamic Random Access Memory (DRAM) Market size is estimated to reach 328.59 billion with a compound annual growth rate of 28.70% from 2018 to 2023 (forecast period). The report covers the COVID-19 analysis of the dynamic random access memory (DRAM) market and offers a full and detailed overview of market segments, current developments, growth projections, and business challenges from 2018 to 2023 (the prediction period) to assess market opportunities.
Dynamic Random Access Memory (DRAM) is a type of RAM used in computer devices to store data or program code that a computer processor needs to operate. This type of RAM allows the process to directly access any part of the memory without proceeding sequentially from starting. DRAM stores every bit of data in a separate storage cell within an integrated circuit board. DRAM has only one capacitor and one transistor per bit, unlike the Static Random Access Memory (SRAM), which requires six transistors. The critical benefit of DRAM is its simple design, low cost, and speed compared to other alternatives.
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Market Dynamics
Over the years, the electronics industry has seen rapid progress in terms of connectivity, data transfer rate, processing power, and human interaction. Technologies such as IoT and AI have revolutionized the electronics industry, increasing the market for smartphones, PCs, laptops, and other computer devices. DRAM provides higher storage at faster data transfer speed compared to its previous counterparts.
Growing demand for smartphones in the consumer product industry with improved gaming, photography, and higher data transfer rates for efficient communication needs the use of DRAM. As a result, this rising demand for smartphone applications captures a considerable DRAM market share.
Market Segmentation
The global DRAM market has been segmented based on type, technology, and application.
Based on type, the global DRAM market has been segmented into Synchronous DRAM, Burst Extended Data Output (BEDO), Extended Data Output (EDO), Asynchronous DRAM, and FPM (Fast Page Mode).
Based on technology, the global DRAM market has been segmented into DDR4, DDR3, DDR5/GDDR5, DDR2.
Based on application, the global DRAM market has been segmented into mobile phones, PCs/laptops, gaming consoles, and networking devices.
Regional Analysis
Based on the region, the global DRAM market has been segmented into North America, Europe, Asia Pacific, and the rest of the world.
The DRAM market has been projected to see a healthy amount of growth during the prediction period. This can be mainly attributed to its smartphone preference and the fact that smartphones have become increasingly popular in developing countries such as China, Brazil, and India. The Asia Pacific region has dominated the DRAM market and is expected to remain dominant in the coming years. The other markets that are growing are North America, which has performed very well in the past and is expected to continue doing so during the forecast period. The region of the Middle East and Africa is projected to display the best growth rate in the forecast period.
Key Players
The key players identified by MRFR operating in the global DRAM market are Winbond Electronics Corporation, Samsung Electronics Co., Ltd., Nanya Technology Corporation, Micron Technology, Inc., ATP Electronics, Inc., Integrated Silicon Solution Inc., Powerchip Technology Corporation, SK Hynix Inc., Kingston Technology Corporation and Transcend Information, Inc.
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